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| Semiconductor BC858 PNP Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=-30V * Complementary pair with BC848 Ordering Information Type NO. BC858 Marking VA : hFE rank Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.38 -0.03 +0.05 2.90.1 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2011-000 0.124 1 BC858 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -30 -30 -5 -100 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure (Ta=25C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=-1mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE= 0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200A, f=1KHz,Rg=2K, f=200Hz Min. Typ. Max. -30 110 -900 150 -700 -650 -15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2011-000 2 BC858 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE Fig. 3 IC-VCE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-2011-000 3 |
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